Title :
LEC-growth and characterization of n- and p-type Fe-doped InP
Author :
Mosel, F. ; Seidl, A. ; Hofmann, D. ; Muller, G.
Author_Institution :
Inst. fur Werkstoffwissenschaften, Erlangen Univ., Nurnberg, Germany
Abstract :
The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor
Keywords :
III-V semiconductors; crystal growth from melt; electrical conductivity of crystalline semiconductors and insulators; indium compounds; iron; semiconductor doping; semiconductor growth; tellurium; zinc; Hall effect measurements; InP:Fe; InP:Fe,Te; InP:Fe,Zn; LEC-growth; characterization; co-doping; deep donor; electronic transport properties; liquid encapsulated Czochralski; n-type InP:Fe; optical analysis; p-type InP:Fe; partial compensation; semiconductors; theoretical calculations; Absorption; Atomic measurements; Chemical analysis; Crystals; Doping; Hall effect; Indium phosphide; Iron; Tellurium; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147365
