DocumentCode :
3552193
Title :
Beam-leaded and intraconnected integrated circuits
Author :
Lepselter, M.P. ; Waggener, H.A. ; Davis, R.E.
Author_Institution :
Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey
Volume :
10
fYear :
1964
fDate :
1964
Firstpage :
28
Lastpage :
28
Abstract :
Devices with beam leads, described in the previous paper, can be connected into circuits in many ways. Examples of the following are shown: an isolated device or devices mounted in an ordinary header; transistors appliquéd to a tantalum thin-film circuit; transistors and beam-lead silicon diffused resistors appliquéd to a connection pattern on ceramic. Working circuits of both analog and digital types are included. An extension of the beam-connection concept to batch-fabricated integrated circuits is described. In these, the top-surface intraconnections between devices are made strong in the same way as the leads from the circuit. Isolation trenches are cut through from the back surface in the same process which disconnects the circuits and exposes the leads. Parasitic capacitance is negligible in such circuits. Performance of high-speed digital circuits made in this way is given.
Keywords :
Ceramics; Digital circuits; Lead; Parasitic capacitance; Resistors; Semiconductor thin films; Silicon; Thin film circuits; Thin film devices; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1964 International
Type :
conf
DOI :
10.1109/IEDM.1964.187450
Filename :
1473847
Link To Document :
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