DocumentCode :
3552198
Title :
Silicon monolithic random pulse generator
Author :
Wang, L. ; Robertson, H. ; Schuegraf, K.K.
Author_Institution :
Westinghouse Electric Corporation, Newbury Park, Calif.
Volume :
10
fYear :
1964
fDate :
1964
Firstpage :
32
Lastpage :
32
Abstract :
A silicon single-chip random-locked pulse generator has been fabricated by using component redundancy and two layer interconnect techniques. The system consists of 17 DTL Nand gates with a total of 153 components. The circuit has two input and two output terminals. Its function will be briefly described. Processing yield and single layer interconnections are the basic restrictions for the fabrication of complex monolithic subsystems. The yield problem has been overcome by using a component redundancy technique. The interconnection problem has been solved by using two layer interconnections separated by an insulating layer. Combination of these two techniques was utilized for manufacturing of the device.
Keywords :
Etching; Fabrication; Frequency; Insulation; Integrated circuit interconnections; Manufacturing; Molecular electronics; Pulse generation; Silicon compounds; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1964 International
Type :
conf
DOI :
10.1109/IEDM.1964.187455
Filename :
1473852
Link To Document :
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