DocumentCode :
3552200
Title :
PbSe diode laser
Author :
Butler, J.F. ; Calawa, A.R. ; Rediker, R.H. ; Rediker, R.
Author_Institution :
Massachusetts Institute of Technology, Lexington, Massachusetts
Volume :
10
fYear :
1964
fDate :
1964
Firstpage :
36
Lastpage :
36
Abstract :
Laser action at 8.5 µ has been observed from PbSe diodes. The diodes were prepared from p-type PbSe Which had been annealed under closely controlled conditions of temperature and Se vapor pressure to obtain a hole concentration of 
cm-3. The n-p junction was formed by diffusing excess Pb into a cleaved
cm-3. The n-p junction was formed by diffusing excess Pb into a cleavedKeywords :
Annealing; Current measurement; Diode lasers; Gas lasers; Laboratories; Laser modes; Optical pulses; Power lasers; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1964 International
Type :
conf
DOI :
10.1109/IEDM.1964.187457
Filename :
1473854
Link To Document :
