DocumentCode :
3552202
Title :
Temperature dependency of incoherent and coherent radiation in GaAs diodes
Author :
Gonda, T. ; Junker, H. ; Lamorte, M.F. ; Nyul, P.
Author_Institution :
Radio Corporation of America, Somerville, New Jersey
Volume :
10
fYear :
1964
fDate :
1964
Firstpage :
38
Lastpage :
40
Abstract :
The temperature behavior of GaAs luminescent diodes varies widely. We show that the degradation of the incoherent radiation with increasing temperature is not constant, the slope is a function of temperature, and this functional dependence is not the same for all classes of diodes. For one extreme class of diodes the ratio of power output at 77°K to 300°K is in the ratio of 5:1 while for the other extreme class the ratio is 100:1. In most cases the rate of degradation in the neighborhood of 77°K is considerably greater than at elevated temperatures. The slope of the power versus temperature curve at 77°K may be greater by one order of magnitude than that at 300° K. For the temperature range greater than 150° K, the slope is more or less constant for all diodes. The rate of degradation at 77°K is independent of the value of efficiency at 77°K.
Keywords :
Coupling circuits; Degradation; Diode lasers; Gallium arsenide; Optical losses; Optical materials; Stimulated emission; Temperature dependence; Temperature distribution; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1964 International
Type :
conf
DOI :
10.1109/IEDM.1964.187459
Filename :
1473856
Link To Document :
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