Application of InP HEMT devices to millimeter-wave MMICs

Author

Yuen, C. ; Pao, Y.C. ; Majidi-Ahy, R. ; Riaziat, M. ; Nishimoto, C.

Author_Institution

Litton Solid State Div., Santa Clara, CA, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

336

Lastpage

343

Abstract

The circuit design and fabrication of monolithic low-noise InP HEMT amplifiers that cover from 5 to beyond 100 GHz are described. The amplifiers use 0.25-μm and 0.1-μm InAlAs/InGaAs/InP HEMTs as active devices and on-chip matching and biasing circuits. The device performances for InP HEMTs with various gate geometries and the performance of the developed InP HEMT MMICs are presented

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; impedance matching; indium compounds; microwave amplifiers; wideband amplifiers; 0.25 to 0.1 micron; 5 to 100 GHz; HEMT MMICs; HEMT amplifiers; InAlAs-InGaAs-InP; MIMIC; biasing circuits; circuit design; distributed amplifiers; fabrication; gate geometries; millimeter-wave MMICs; on-chip matching; performance; semiconductors; Circuit synthesis; Fabrication; Geometry; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Millimeter wave circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147386

Filename

147386