Silicon p-n junctions as detectors for uv radiation

Photoconductive and photovoltaic devices for detection of short wavelength visible and ultraviolet radiation have not previously been developed to the same extent as solid state infrared detectors. The spectral response of semiconductor devices generally exhibits a sharp drop in sensitivity with decreasing wavelength e. g. in standard Si devices, the Dλ at 4000 Å is lower than the Dλ at 8000 Å by orders of magnitude and is dropping rapidly as one proceeds into the ultraviolet.