Silicon hot carrier microwave detectors

Until recently most approaches to the detection of microwave power have depended upon the nonlinear resistance properties of silicon or germanium point contact diodes or upon the thermal properties of various materials which exhibit thermistor or bolometric action. A new class of solid state microwave detectors based upon the hot carrier properties of majority carriers in germanium has been described. These hot carrier detectors are based upon the non-equilibrium carrier distribution which results when an incident microwave field accelerates the free carriers so that they acquire more energy than the lattice in which they reside. These hot carriers, out of equilibrium with the lattice, give rise to a thermoelectric voltage which is proportional to the incident rf field. This paper describes the design, fabrication and performance of hot cartier detectors using high resistivity silicon and bonded point contacts. Direct-current characteristics as well as rf properties in the range from 1-10 Gc are described. Of particular interest are power sensitivity, dynamic range and power handling capability.