A model for the transient response of four-terminal field effect transistors

A recent publication considered important aspects of the low-frequency operation of semiconductor four-terminal field-effect transistors (FTFET´s) having electrically distinct gates to which independent bias and signal voltages may be applied. The present paper extends this work by developing a model for the transient as well as the low-frequency performance of a device with symmetrical geometry, operating in the region beyond pinch-off.