• DocumentCode
    3552236
  • Title

    A model for the transient response of four-terminal field effect transistors

  • Author

    Hudson, P.H. ; Lindholm, F.A ; Hamilton, D.J.

  • Author_Institution
    University of Arizona, Tucson, Arizona
  • Volume
    10
  • fYear
    1964
  • fDate
    1964
  • Firstpage
    80
  • Lastpage
    80
  • Abstract
    A recent publication considered important aspects of the low-frequency operation of semiconductor four-terminal field-effect transistors (FTFET´s) having electrically distinct gates to which independent bias and signal voltages may be applied. The present paper extends this work by developing a model for the transient as well as the low-frequency performance of a device with symmetrical geometry, operating in the region beyond pinch-off.
  • Keywords
    Diodes; Distributed amplifiers; Electrical capacitance tomography; FETs; Geometry; Laboratories; Solid modeling; Transient response; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1964 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1964.187490
  • Filename
    1473887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552236