Title :
CBE-grown InGaAs/InP QW structures: an extensive investigation
Author :
Antolini, A. ; Bradley, P.J. ; Cacciatore, C. ; Campi, D. ; Gastaldi, G. ; Genova, F. ; Iori, M. ; Lamberti, C. ; Morello, G. ; Papuzza, C. ; Rigo, C.
Author_Institution :
Centro Studi e Lab. Telecomunicazioni, Torino, Italy
Abstract :
Chemical beam epitaxially (CBE) grown InGaAs/InP MQW interfaces were analyzed to explain experimental data from high-quality single and multiple quantum wells (QWs). An exponential decay of the group V flux leading to non-negligible effects for several seconds after the switch are assumed to explain photoluminescence (PL) and X-ray diffraction (XRD) results, even for a very fast flux switching system. The very intense absorption peak and the high number of satellite peaks in the diffraction rocking curve obtained even on samples grown in non-optimized conditions confirm the potential of CBE
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; chemical beam epitaxial growth; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor quantum wells; CBE; InGaAs-InP; X-ray diffraction; diffraction rocking curve; fast flux switching; group V flux; intense absorption peak; multiple quantum wells; nonneglible effects; nonoptimized conditions; photoluminescence; semiconductors; Chemical analysis; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Quantum well devices; Switches; Switching systems; X-ray diffraction; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147390
