Title :
High purity InP grown by chemical beam epitaxy
Author :
Rudra, A. ; Carlin, J.-F. ; Pavesi, L. ; Piazza, F. ; Proctor, M. ; Ilegems, M.
Author_Institution :
Inst. for Micro- & Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland
Abstract :
Optical and transport properties of InP layers that demonstrate that when growth conditions are carefully optimized, the purity of chemical beam epitaxy (CBE)-grown InP is very high are discussed. The optical properties of the grown material are analyzed the bandgap temperature dependence of InP is determined. A Hall mobility as high as 153800 cm2 V-1 s-1 at 77 K with N d-Na=1.5×1014 cm -3 has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535°C with linewidths as narrow as 0.07 meV. Excitonic transitions have been recorded between 2 K and 250 K. The free exciton energy position leads to a highly accurate expression of the bandgap energy, which extrapolates to Eg=1.347 eV at 300 K
Keywords :
Hall effect; III-V semiconductors; chemical beam epitaxial growth; indium compounds; photoluminescence; semiconductor epitaxial layers; 1.347 eV; 2 to 300 K; 535 C; CBE; Hall mobility; InP layers; PH3 cracker temperature; bandgap energy; bandgap temperature dependence; chemical beam epitaxy; finely resolved excitonic transitions; growth conditions; linewidths; optical properties; photoluminescence spectra; purity; semiconductors; substrate temperature; transport properties; Chemicals; Epitaxial growth; Hall effect; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Photoluminescence; Photonic band gap; Substrates; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147392
