• DocumentCode
    3552258
  • Title

    T-gate process and delay time analysis for sub-1/4-μm-gate InAlAs/InGaAs HEMT´s

  • Author

    Enoki, Takatomo ; Ishii, Yasunobu ; Tamamura, Toshiaki

  • Author_Institution
    NTT LSI Lab., Kanagawa, Japan
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    371
  • Lastpage
    376
  • Abstract
    A T-gate process using a single EB resist is described. A cutoff frequency of 200 GHz is achieved in a 0.12-μm-gate HEMT. Delay times of sub-1/4-μm-gate devices are quantitatively investigated by breaking down the total delay times into electron transit, channel charging, and parasitic charging times. The effective velocity of electrons is estimated to be 2.7×107 cm/s
  • Keywords
    III-V semiconductors; aluminium compounds; electron resists; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.25 to 0.12 micron; 2.7E5 m/s; HEMT; InAlAs-InGaAs; T-gate process; channel charging time; cutoff frequency; delay time analysis; electron transit time; electron velocity; parasitic charging times; semiconductors; single EB resist; Contact resistance; Delay effects; Electrodes; Etching; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Ohmic contacts; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147393
  • Filename
    147393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552258