Title :
T-gate process and delay time analysis for sub-1/4-μm-gate InAlAs/InGaAs HEMT´s
Author :
Enoki, Takatomo ; Ishii, Yasunobu ; Tamamura, Toshiaki
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
A T-gate process using a single EB resist is described. A cutoff frequency of 200 GHz is achieved in a 0.12-μm-gate HEMT. Delay times of sub-1/4-μm-gate devices are quantitatively investigated by breaking down the total delay times into electron transit, channel charging, and parasitic charging times. The effective velocity of electrons is estimated to be 2.7×107 cm/s
Keywords :
III-V semiconductors; aluminium compounds; electron resists; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.25 to 0.12 micron; 2.7E5 m/s; HEMT; InAlAs-InGaAs; T-gate process; channel charging time; cutoff frequency; delay time analysis; electron transit time; electron velocity; parasitic charging times; semiconductors; single EB resist; Contact resistance; Delay effects; Electrodes; Etching; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Ohmic contacts; Resists;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147393
