Title :
Reflectivity from multiple quantum well modulators with contrast ratio of 22:1 at 1.55 /spl mu/m
Author :
Cunningham, John E. ; Pathak, R.N. ; Ford, Joseph E. ; Jan, W.Y. ; Kastalsky, A.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Summary form only given. We present the performance of InGaAs/InP multiple quantum well reflection modulators, which meet the specifications for fiber-in-the-loop systems for the first time, to our knowledge. Our devices are surface-normal modulators that exhibit on/off contrast ratios (CR) in reflectivity of 22:1 and have a 10:1 level over a 26-nm bandwidth at 1.55 /spl mu/m.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; reflectivity; semiconductor quantum wells; 1.55 micron; InGaAs-InP; contrast ratio; fiber-in-the-loop system; multiple quantum well modulator; reflectivity; surface-normal modulator; Bandwidth; Chromium; Excitons; Indium gallium arsenide; Indium phosphide; Optical fiber subscriber loops; Optical modulation; Quantum well devices; Reflectivity; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
