Title :
Novel InP-channel HEMTs grown by organometallic vapor phase epitaxy
Author :
Aina, L. ; Mattingly, M. ; Burgess, M. ; Hempfling, E. ; Meerschaert, A. ; Connor, J. M O
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
Abstract :
The growth and fabrication of high performance InP-channel HEMTs with transconductances as high as 335 mS/mm, low output conductances of 6 mS/mm, and high terminal breakdown voltages are discussed. It is shown that the AlInAs HEMTs have microwave gains as high as 8 dB at 30 GHz with fT and fmax of 38 and 97 GHz. The device operate as power HEMTs at 18 GHz and exhibit power outputs of 0.34 W/mm and efficiencies of 26%. The results and estimated maximum achievable power output of 1.3 W/mm demonstrate the potential of the AlInAs/InP HEMT for power microwave applications
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 18 to 97 GHz; 26 percent; 8 dB; AlInAs-InP; InP-channel; OMVPE; breakdown voltages; efficiencies; fabrication; maximum achievable power output; microwave gains; organometallic vapor phase epitaxy; output conductances; power HEMTs; power microwave; power outputs; semiconductors; transconductances; Aerospace materials; Electron mobility; Epitaxial growth; Fabrication; HEMTs; Indium phosphide; MODFETs; Microwave devices; Synchronous digital hierarchy; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147395
