An InAlAs/InAs MODFET

Author

Eugster, Cristopher C. ; Broekaert, Tom P E ; del Alamo, Jesús A. ; Fonstad, Clifton G.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

385

Lastpage

388

Abstract

The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L_G=2 μm device displays well behaved characteristics, showing sharp pinch-off (V_th=-0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS/mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations from which the electron channel is confirmed to be the InAs layer

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; -0.8 V; -9.6 V; 2 micron; 30 A; 300 K; InAs channel; InAsAs-InAs; InP substrate; MBE; MODFET; Shubnikov-de Haas oscillations; breakdown voltage; channel quantization; drain current; electron channel; epitaxial heterostructure; fabrication; magnetic field measurements; modulation-doped field-effect transistor; molecular beam epitaxy; output conductance; semiconductors; testing; transconductance; Displays; Epitaxial layers; FETs; Fabrication; HEMTs; Indium compounds; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147396

Filename

147396