Title :
An InAlAs/InAs MODFET
Author :
Eugster, Cristopher C. ; Broekaert, Tom P E ; del Alamo, Jesús A. ; Fonstad, Clifton G.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An LG=2 μm device displays well behaved characteristics, showing sharp pinch-off (Vth=-0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS/mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations from which the electron channel is confirmed to be the InAs layer
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; -0.8 V; -9.6 V; 2 micron; 30 A; 300 K; InAs channel; InAsAs-InAs; InP substrate; MBE; MODFET; Shubnikov-de Haas oscillations; breakdown voltage; channel quantization; drain current; electron channel; epitaxial heterostructure; fabrication; magnetic field measurements; modulation-doped field-effect transistor; molecular beam epitaxy; output conductance; semiconductors; testing; transconductance; Displays; Epitaxial layers; FETs; Fabrication; HEMTs; Indium compounds; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147396
