Title :
Ultra-thin GaxIn1-xAs/InP (0⩽x⩽0.47) layer growth by chemical beam epitaxy
Author :
Yokouchi, N. ; Uchida, T.K. ; Uchida, T.K. ; Miyamoto, T. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
The photoluminescence (PL) and optical absorption properties of Ga xIn1-xAs/InP (0.2⩽x⩽0.47) lattice-matched and strained quantum wells (QWs) grown by chemical beam epitaxy (CBE) are discussed. The barrier thickness dependence of PL intensity and excitonic absorption peaks were observed at room temperature even in a 12-A-thick QW. The wavelengths at which excitonic absorption peaks appeared are shown to be in agreement with theoretical estimations that consider the band structure modification due to the strain effect
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; spectra; 12 A; CBE; GaxIn1-xAs-InP; band structure modification; barrier thickness dependence; chemical beam epitaxy; excitonic absorption peaks; lattice matched quantum wells; optical absorption properties; photoluminescence; room temperature; semiconductors; strain effect; strained quantum wells; Absorption; Chemicals; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Optical pumping; Photoluminescence; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147398
