DocumentCode
3552263
Title
Ultra-thin GaxIn1-xAs/InP (0⩽x ⩽0.47) layer growth by chemical beam epitaxy
Author
Yokouchi, N. ; Uchida, T.K. ; Uchida, T.K. ; Miyamoto, T. ; Koyama, F. ; Iga, K.
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
fYear
1991
fDate
8-11 Apr 1991
Firstpage
403
Lastpage
406
Abstract
The photoluminescence (PL) and optical absorption properties of Ga xIn1-xAs/InP (0.2⩽x ⩽0.47) lattice-matched and strained quantum wells (QWs) grown by chemical beam epitaxy (CBE) are discussed. The barrier thickness dependence of PL intensity and excitonic absorption peaks were observed at room temperature even in a 12-A-thick QW. The wavelengths at which excitonic absorption peaks appeared are shown to be in agreement with theoretical estimations that consider the band structure modification due to the strain effect
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; spectra; 12 A; CBE; GaxIn1-xAs-InP; band structure modification; barrier thickness dependence; chemical beam epitaxy; excitonic absorption peaks; lattice matched quantum wells; optical absorption properties; photoluminescence; room temperature; semiconductors; strain effect; strained quantum wells; Absorption; Chemicals; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Optical pumping; Photoluminescence; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147398
Filename
147398
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