Title :
Monolithically integrated In0.60Ga0.47As/In 0.52Al0.48As/InP photoreceivers with submicron devices
Author :
Lai, R. ; Bhattacharya, P.K. ; Pavlidis, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The performance characteristics of planar InP-based PIN-MODFET front-end photoreceivers realized by molecular beam epitaxial regrowth are discussed. The full width at half maximum (FWHM) of the temporal response to photoexcitation for the full circuit is shown to be 60 ps, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 Ω is 15.0 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; receivers; 15 GHz; 33 ohm; 6.5 GHz; 60 ps; In0.60Ga0.40As-In0.52Al0.48 As-InP; InP substrate; OEIC; PIN-MODFET front-end photoreceivers; bandwidth; frequency response; molecular beam epitaxial regrowth; performance characteristics; semiconductors; submicron devices; temporal response; Capacitance; Circuits; Electric variables measurement; Electrical resistance measurement; Indium phosphide; Optical pulses; PIN photodiodes; Resistors; Space vector pulse width modulation; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147399
