Title :
Ion implanted monolithically integrated planar InP/InGaAs/InP:Fe photoreceiver
Author :
Römer, D. ; Albrecht, H. ; Hoffmann, L. ; Walter, J.W. ; Ebbinghaus, G.
Author_Institution :
Siemens Res. Lab., Munich, Germany
Abstract :
The structure and fabrication of an integrated pin photodiode (PD) and junction field-effect transistor (JFET) are discussed. A 3-dB bandwidth of 5.8 GHz and an external quantum efficiency of 87% for the PD have been achieved using a selective n implantation to reduce the series resistance. The pinch off voltage and drain current of the JFET with a 1.5-μm gate length have been adjusted with a selective p implantation beneath the channel layer
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; iron; junction gate field effect transistors; optical communication equipment; p-i-n diodes; photodiodes; receivers; 1.5 micron; 5.8 GHz; 87 percent; JFET; bandwidth; drain current; external quantum efficiency; gate length; junction field-effect transistor; pin photodiode; pinch off voltage; semiconductors; Annealing; Doping; FETs; Indium gallium arsenide; Indium phosphide; Iron; Leakage current; P-n junctions; Threshold voltage; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147401
