Ion implanted monolithically integrated planar InP/InGaAs/InP:Fe photoreceiver

Author

Römer, D. ; Albrecht, H. ; Hoffmann, L. ; Walter, J.W. ; Ebbinghaus, G.

Author_Institution

Siemens Res. Lab., Munich, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

415

Lastpage

418

Abstract

The structure and fabrication of an integrated pin photodiode (PD) and junction field-effect transistor (JFET) are discussed. A 3-dB bandwidth of 5.8 GHz and an external quantum efficiency of 87% for the PD have been achieved using a selective n implantation to reduce the series resistance. The pinch off voltage and drain current of the JFET with a 1.5-μm gate length have been adjusted with a selective p implantation beneath the channel layer

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; iron; junction gate field effect transistors; optical communication equipment; p-i-n diodes; photodiodes; receivers; 1.5 micron; 5.8 GHz; 87 percent; JFET; bandwidth; drain current; external quantum efficiency; gate length; junction field-effect transistor; pin photodiode; pinch off voltage; semiconductors; Annealing; Doping; FETs; Indium gallium arsenide; Indium phosphide; Iron; Leakage current; P-n junctions; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147401

Filename

147401