Title :
Influence of domain formation on the Vds dependence of noise and gate leakage in InGaAs FETs
Author :
Newson, D.J. ; Merrett, R.P. ; Ridley, B.K.
Author_Institution :
British Telecom Lab., Ipswich, UK
Abstract :
A model for high gate leakage currents in InGaAs-channel FETs is described. Such leakage is caused by running gate metal down an unpassivated mesa. Even when an airbridge is used, gate leakage is higher than anticipated from the sum of source-gate and drain-gate diode currents. Measurements of typical leakage and transconductance for a 1 μm HFET at Vds=2 V are presented. The leakage is much higher than that observed at Vds=0 V. It is shown that, in JFETs and HFETs, reducing the doping level leads to a near-exponential decrease in leakage currents. Properly designed HEMTs can have low gate leakage in the high gain region
Keywords :
III-V semiconductors; electron device noise; field effect transistors; gallium arsenide; indium compounds; leakage currents; semiconductor device models; HFETs; JFETs; domain formation; doping level; drain source voltage dependence; gate leakage; model; semiconductors; transconductance; Acoustical engineering; Circuit noise; FETs; Gate leakage; HEMTs; Impact ionization; Indium gallium arsenide; JFETs; Leakage current; MODFETs;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147404
