DocumentCode :
3552271
Title :
Enhanced Schottky barrier InP MESFETs
Author :
Abid, Z. ; Gopinath, A. ; Williamson, F. ; Nathan, M.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fYear :
1991
fDate :
8-11 Apr 1991
Firstpage :
431
Lastpage :
433
Abstract :
The design, fabrication, and characterization of a stable InP MESFET with a delta-doped p+ layer are outlined. The 1 μm gate length MESFET has a transconductance of 110 mS/mm; the InP surface was not passivated or treated prior to the gate metal deposition. Measured fmax and fT are 11.6 GHz and 5.4 GHz respectively
Keywords :
III-V semiconductors; Schottky gate field effect transistors; indium compounds; solid-state microwave devices; 1 micron; 11.6 GHz; 5.4 GHz; InP; MESFETs; Schottky barrier enhancement; characterization; delta-doped p+ layer; design; fabrication; gate length; semiconductors; stable InP MESFET; transconductance; FETs; Fabrication; Gallium arsenide; Gold; Indium phosphide; MESFETs; Metallization; Schottky barriers; Surface treatment; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
Type :
conf
DOI :
10.1109/ICIPRM.1991.147405
Filename :
147405
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3552271
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