DocumentCode :
355228
Title :
Optical modulators in the 500-600-nm visible wavelength regime using an Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As MOCVD-grown AFPM
Author :
Clark, Andrew ; Egan, Renate J. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
1996
fDate :
2-7 June 1996
Firstpage :
488
Lastpage :
489
Abstract :
Summary form only given. We have demonstrated the growth of good quality, high reflectivity mirrors at wavelengths as low as 550 nm and electroabsorption between 580 and 540 nm in AlGaAs/AlAs MQWs. We present details on these and results on the characterization of the modulator grown by integrating the mirror and the MQW structures in a Fabry-Perot cavity.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; mirrors; reflectivity; semiconductor quantum wells; 500 to 600 nm; AlGaAs-AlGaAs; AlGaAs/AlAs MQW; Fabry-Perot cavity; MOCVD-grown AFPM; electroabsorption; high reflectivity mirror; optical modulator; visible wavelength; Bandwidth; Mirrors; Optical interconnections; Optical modulation; Optical transmitters; Photodetectors; Quantum well devices; Reflectivity; Resonance; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
Type :
conf
Filename :
864965
Link To Document :
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