Title :
Design, fabrication, and characterization of the double-barrier, reservoir, and quantum well electron tranfer modulator
Author :
Monnard, R. ; Rudra, Atri ; Brocard, E. ; Miles, Redfern ; Jouneau, P.-H. ; Berrocosa, J. ; Dupertuis, M.A. ; Sadeghi, A. ; Dwir, Benjamin ; Reinhart, F.K. ; Wang, Jiacheng ; Leburton, J.P.
Author_Institution :
Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
Summary form only given. We present data of an enhanced version of the BRAQWET, where an additional 70-/spl Aring/ InP barrier layer has been added between the reservoir and the quantum well. This additional barrier serves to increase the confinement of the wavefunction to the quantum well. For this reason we refer to this new structure as DBRAQWET, to signify the presence of a double barrier. Optical simulations employing a Poisson-Schrodinger self-consistent scheme shows clearly the increase in absorption and the accompanying increase in differential absorption.
Keywords :
electro-optical modulation; semiconductor quantum wells; DBRAQWET; InP; Poisson-Schrodinger self-consistent method; differential absorption; double-barrier reservoir and quantum well electron tranfer modulator; optical simulation; Absorption; Bleaching; Current density; Electrons; Fabrication; Indium phosphide; Numerical simulation; Photonic band gap; Reservoirs; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
