DocumentCode
3552291
Title
Development of a high power - High efficiency - Wideband traveling-wave tetrode
Author
Mayer, C.B.
Author_Institution
General Electric Co., Schenectady, N. Y.
fYear
1965
fDate
20-22 Oct. 1965
Firstpage
16
Lastpage
16
Abstract
The traveling wave tetrode is a unique device which can provide multi decade bandwidths in the VHF-UHF frequency range. The device consists basically of two isolated transmission lines which are coupled by the transverse electron beam. The beam is rf modulated by the signal on the input line and collected on the output line. The two lines are designed to have equal phase velocity at a given frequency in the operating band so that the rf currents will continue to add up in the direction of propagation. Two basic types of device have been developed. The first device which utilizes uniform input and output transmission lines produces the maximum gain - bandwidth product. Using this approach a bandwidth from 6 to 600 mc has been demonstrated at the 100 watt output level and 15 db gain (17% eff.). In the second type of device the impedance of the output line is tapered after a Short buildup section to maintain a constant rf voltage swing. This approach produces a device with optimum efficiency. An efficiency in excess of 40% has been demonstrated. Power output capability is in the 500-700 watt range with a bandwidth from 6 to 300 mc. The gain is 13 db. Both devices use the same vacuum envelope (
) and weigh 7 1/2 lbs. Because of the high efficiency, extreme bandwidth, and small size and weight, this approach offers tremendous advantage over beam type devices for applications in VHF-UHF frequency range.
) and weigh 7 1/2 lbs. Because of the high efficiency, extreme bandwidth, and small size and weight, this approach offers tremendous advantage over beam type devices for applications in VHF-UHF frequency range.Keywords
Bandwidth; Electron beams; Frequency; Gain; Impedance; Optical coupling; Optical modulation; Power transmission lines; RF signals; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1965 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1965.187521
Filename
1474102
Link To Document