Title :
Wafer-fused vertical-cavity bistable device at 1.55 /spl mu/m wavelength
Author :
Jeannes, F. ; Oudar, J.L. ; Azoulay, Rina ; Ougazzaden, A.
Author_Institution :
France Telecom, CNET, Paris, France
Abstract :
Summary form only given. We have demonstrated a new vertical-cavity bistable device which exhibits all-optical switching at 1.55-/spl mu/m wavelength, with submilliwatt threshold and large contrast ratio. It was realized by wafer fusion of an InGaAsP/InP active heterostructure onto a AlAs/GaAs Bragg mirror. Finally the carrier-induced dispersive nonlinearity of the InGaAsP active layer has been investigated.
Keywords :
optical bistability; optical fabrication; optical switches; wafer bonding; 1.55 micron; AlAs-GaAs; AlAs/GaAs Bragg mirror; InGaAsP-InP; InGaAsP/InP active heterostructure; all-optical switching; carrier-induced dispersive nonlinearity; vertical-cavity bistable device; wafer fusion; Fiber lasers; Gallium arsenide; Indium phosphide; Laser beams; Mirrors; Optical coupling; Optical fibers; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
