• DocumentCode
    3552313
  • Title

    High frequency complementary transistors in silicon monolithic circuits

  • Author

    Chang, G.Y. ; Tennies, E.H. ; Kloffenstein, T.J.

  • Volume
    11
  • fYear
    1965
  • fDate
    1965
  • Firstpage
    26
  • Lastpage
    27
  • Abstract
    Some of the restrictions on integrated circuit design have been overcome by the development of high frequency, complementary bipolar transistors which are compatible with present day integrated circuit process techniques. In the area of linear amplifiers, complementary NPN-PNP transistors are desired in order to provide dc level shifting, low power dissipation and high input impedance for very high gain amplifiers. The complementary transistor circuits are also preferred in the design of certain digital circuits such as low power logic and memory drivers.
  • Keywords
    Bipolar integrated circuits; Bipolar transistors; Digital circuits; Frequency; High power amplifiers; Impedance; Integrated circuit synthesis; Logic design; Power dissipation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1965 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1965.187541
  • Filename
    1474122