DocumentCode :
3552313
Title :
High frequency complementary transistors in silicon monolithic circuits
Author :
Chang, G.Y. ; Tennies, E.H. ; Kloffenstein, T.J.
Volume :
11
fYear :
1965
fDate :
1965
Firstpage :
26
Lastpage :
27
Abstract :
Some of the restrictions on integrated circuit design have been overcome by the development of high frequency, complementary bipolar transistors which are compatible with present day integrated circuit process techniques. In the area of linear amplifiers, complementary NPN-PNP transistors are desired in order to provide dc level shifting, low power dissipation and high input impedance for very high gain amplifiers. The complementary transistor circuits are also preferred in the design of certain digital circuits such as low power logic and memory drivers.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Digital circuits; Frequency; High power amplifiers; Impedance; Integrated circuit synthesis; Logic design; Power dissipation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1965 International
Type :
conf
DOI :
10.1109/IEDM.1965.187541
Filename :
1474122
Link To Document :
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