DocumentCode
3552313
Title
High frequency complementary transistors in silicon monolithic circuits
Author
Chang, G.Y. ; Tennies, E.H. ; Kloffenstein, T.J.
Volume
11
fYear
1965
fDate
1965
Firstpage
26
Lastpage
27
Abstract
Some of the restrictions on integrated circuit design have been overcome by the development of high frequency, complementary bipolar transistors which are compatible with present day integrated circuit process techniques. In the area of linear amplifiers, complementary NPN-PNP transistors are desired in order to provide dc level shifting, low power dissipation and high input impedance for very high gain amplifiers. The complementary transistor circuits are also preferred in the design of certain digital circuits such as low power logic and memory drivers.
Keywords
Bipolar integrated circuits; Bipolar transistors; Digital circuits; Frequency; High power amplifiers; Impedance; Integrated circuit synthesis; Logic design; Power dissipation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1965 International
Type
conf
DOI
10.1109/IEDM.1965.187541
Filename
1474122
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