Title :
Semi-insulating behavior of Cu doped InP
Author :
Leon, R. ; Kaminska, M. ; Liliental-Weber, Z. ; Yu, K.M. ; Chandramouli, M. ; Weber, E.R.
Author_Institution :
Dept. of Mater. Sci., California Univ., Berkeley, CA, USA
Abstract :
Results from electrical measurements, as well as lattice site determination, structural, and X-ray energy dispersive studies of Cu doping on InP, are presented. Hall measurements of carrier concentration as a function of inverse temperature show that InP:Cu exhibits semi-insulating behavior after diffusion with Cu at temperatures exceeding 700°C. Similar measurements of carrier concentration and mobility show that samples exhibited properties typical of hopping conductivity when diffused at temperatures below 700°C. Particle induced X-ray emission (PIXE) performed with channeling in the <110>, <100>, and <111> directions shows a random distribution of Cu, which is typically seen when precipitates are present. Transmission electron microscopy (TEM) indicates the presence of numerous small spherical crystalline precipitates in the samples, and microdiffraction and energy dispersion spectroscopy (EDS) analysis indicates that the most probable phase of these precipitates is Inx Cu
Keywords :
Hall effect; III-V semiconductors; X-ray chemical analysis; annealing; carrier density; carrier mobility; channelling; copper; doping profiles; hopping conduction; indium compounds; precipitation; semiconductor doping; transmission electron microscope examination of materials; 700 C; Hall measurements; InP:Cu; PIXE; TEM; X-ray energy dispersive; carrier concentration; diffusion temperature; electrical measurements; energy dispersion spectroscopy; hopping conductivity; lattice site determination; microdiffraction; particle induced X-ray emission; semi-insulating behavior; semiconductors; spherical crystalline precipitates; Conductivity measurement; Crystallization; Dispersion; Doping; Electric variables measurement; Energy measurement; Indium phosphide; Lattices; Temperature; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147413
