Detailed investigation of a lateral p-n-p transistor

A transistor structure which has been recently reported and which utilizes the lateral part of planar diffused junctions offers some unique advantages in fabricating a complimentary circuit as well as a discrete device due to the simplicity and compatibility in fabrication. A lateral p-n-p transistor was subjected to a detailed investigation with respect to device performance and its relation to geometrical parameters and processing steps. It was possible to trace back the low frequency current gain and the stability of the device to the following influential factors. 1. Concentration distribution of the diffused impurity. 2. Ratio between certain junction areas. 3. Geometric parameters. 4. Annealing and ambient treatments during processing. Devices fabricated during this investigation showed a current gain considerably higher than unity. Performance data and the stability of the device will be discussed in relation to the above mentioned parameters.