Title :
Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE
Author :
Moerman, I. ; Coudenys, G. ; Demeester, P. ; Crawley, J.
Author_Institution :
Lab. for Electromagn. & Acoust., Gent Univ., Belgium
Abstract :
Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H2S and DEZ doping of InP, InGaAs, and 1.3-μm and 1.55-μm quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor doping; semiconductor growth; sulphur; vapour phase epitaxial growth; zinc; InGaAs-InGaAsP; InGaAs:S; InGaAs:Zn; InGaAsP:S; InGaAsP:Zn; InP-InGaAs; InP:S; InP:Zn; semiconductors; substrate orientation; uniformity; Atmospheric waves; Doping; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Inductors; Photoluminescence; Photonic integrated circuits; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147415
