Growth of Be-doped InP by gas-source molecular beam epitaxy

Author

Hakkarainen, T. ; Rakennus, K. ; Hovinen, M. ; Pessa, M. ; Asonen, H.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

fYear

1991

fDate

8-11 Apr 1991

Firstpage

480

Lastpage

483

Abstract

Results of standard Hall and low temperature photoluminescence (PL) measurements of Be-doped InP grown by gas-source molecular beam epitaxy (GSMBE) are presented. The hole concentration increases with increasing Be-source temperature up to 850°C, p=1×10 ¹⁹ cm^-3, and, beyond this temperature, a high compensation reducing the hole concentration occurs. The PL results indicate that at the highest Be incorporations a significant number of donors are introduced into the crystal in addition to the Be acceptors. At Be cell temperature less than 890°C only acceptors are observed, and the ionization energy of Be acceptors at this doping region in InP was measured to be (34±2) meV

Keywords

Hall effect; III-V semiconductors; beryllium; carrier density; chemical beam epitaxial growth; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 850 to 890 C; Be-source temperature; GSMBE; Hall measurements; InP:Be; gas-source molecular beam epitaxy; hole concentration; ionization energy; photoluminescence; semiconductors; Design methodology; Indium phosphide; Laser excitation; Molecular beam epitaxial growth; Photoluminescence; Physics; Semiconductor device doping; Semiconductor materials; Temperature; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147417

Filename

147417