Title :
MBE growth and electrical behavior of single and double Si δ-doped InGaAs-layers
Author :
Passenberg, W. ; Bach, H.-G. ; Böttcher, J.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
The molecular beam epitaxial growth of Si δ-doped donor planes within InGaAs layers is described. The results of Hall and C -V characterization measurements of single and double δ-doped InGaAs channel layers are presented. It is shown that high sheet carrier concentrations approaching 3.8×1013 cm -2 can be achieved. Improved carrier transport in double δ-doped channels for FET applications is proposed and experimentally confirmed by decreased sheet resistance values obtained from double δ-doped structures
Keywords :
Hall effect; III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; δ-doped InGaAs channel layers; C-V characterization; HEMT; InGaAs:Si; MBE growth; carrier transport; double δ-doped channels; electrical behavior; molecular beam epitaxial growth; semiconductors; sheet carrier concentrations; sheet resistance; single δ-doped channels; Atomic layer deposition; Electron mobility; FETs; Frequency; HEMTs; Impurities; Indium gallium arsenide; MODFETs; Particle scattering; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147418
