Title :
Current-controlled liquid phase epitaxy of InAsP on InP substrates
Author :
Inubushi, Kozo ; Sakai, Shiro ; Hyakudai, Toshihisa ; Shintani, Yoshihiro
Author_Institution :
Tokushima Univ., Japan
Abstract :
The effects of the current flow from the substrate to the melt in conventional liquid-phase-epitaxial (LPE) growth of InAsP on (100) InP substrate are investigated. It is shown that, using this technique, the surface is drastically improved for the As solid composition larger than 0.1, the growth rate is increased, and arsenic solid composition at the surface is slightly decreased
Keywords :
III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; substrates; (100) InP substrate; As solid composition; InAsP-InP; InP substrates; LPE; current controlled epitaxy; current flow effects; growth rate; liquid phase electroepitaxy; liquid phase epitaxy; semiconductors; surface improvement; Boats; Electrons; Epitaxial growth; Furnaces; Indium phosphide; Lattices; Probes; Solids; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147419
