High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy

Author

Hopkinson, M. ; Claxton, P.A. ; David, J.P.R. ; Hill, G. ; Reddy, M. ; Pate, M.A.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

fYear

1991

fDate

8-11 Apr 1991

Firstpage

492

Lastpage

495

Abstract

The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 Å by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to ≃2.1 μm, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 μm. Preliminary studies of InAs-channel MODFET devices are presented

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; p-i-n diodes; photodiodes; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1.0 to 2.1 micron; 10 K; 5 to 70 A; InAs-InP; InAs-channel; MBE; MODFET devices; MQW; molecular beam epitaxy; p-i-n diodes; pseudomorphic quantum wells; semiconductors; solid source molecular beam epitaxy; strained quantum well structures; wavelength; Effective mass; Fluctuations; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Photoluminescence; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147420

Filename

147420