Title :
Surface InAs/InP quantum wells: epitaxial growth and characterization
Author :
Tabata, A. ; Benyattou, T. ; Guillot, G. ; Sobiesierski, Z. ; Clark, S.A. ; Williams, R.H. ; Gendry, M. ; Hollinger, G. ; Viktorovitch, P.
Author_Institution :
LPM, CNRS, Villeurbanne, France
Abstract :
The epitaxial growth and characterization of InAs surface quantum wells grown on InP by molecular beam epitaxy (MBE) are discussed. The structural properties of the InAs layers are described. Photoluminescence results are presented. This system shows practically no coupling between the confined states in the InAs quantum well and the InAs surface states
Keywords :
III-V semiconductors; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; InAs surface states; InAs-InP; MBE; epitaxial growth; photoluminescence; quantum well; semiconductors; structural properties; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Pollution measurement; Substrates; Surface contamination; Surface morphology; Surface reconstruction; Surface treatment; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147421
