DocumentCode :
3552414
Title :
High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth
Author :
Vidimari, Fabio ; Pellegrino, Sergio ; Caldironi, Manuela ; Paola, Angela Di ; Chen, Ruchang
Author_Institution :
Telettra SpA, Vimercate, Italy
fYear :
1991
fDate :
8-11 Apr 1991
Firstpage :
500
Lastpage :
503
Abstract :
The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 107 Ω-cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm2 at critical voltage
Keywords :
III-V semiconductors; cobalt; indium compounds; ion implantation; iron; liquid phase epitaxial growth; semiconductor epitaxial layers; 107 ohmcm; 2.5 V; InP:Co; InP:Fe; characterisation; critical voltages; current densities; epitaxial regrowth; ion implantation; resistivities; semiconductors; semiinsulating InP; semiinsulating buried layers; Conductivity; Current density; Current measurement; Density measurement; Electric variables; Electric variables measurement; Indium phosphide; Ion implantation; Iron; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
Type :
conf
DOI :
10.1109/ICIPRM.1991.147422
Filename :
147422
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3552414
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