Semi-insulating InP:Fe regrowth by hydride VPE around P-InP substrate laser mesas fabricated by reactive ion etching

Author

Lourdudoss, S. ; Nilsson, S. ; Backbom, L. ; Klinga, T. ; Kjebon, O. ; Holmberg, B.

Author_Institution

Swedish Inst. of Microelectron., Kista, Sweden

fYear

1991

fDate

8-11 Apr 1991

Firstpage

504

Lastpage

506

Abstract

The regrowth of SI-InP:Fe by hydride vapor-phase epitaxy (HVPE) around reactive-ion-etched (RIE) vertical mesas of lasers grown on Zn-doped p-InP substrate is described. The laser performance measurements show that at 20°C, the DC and pulsed power saturation currents are 300 mA and >600 mA, or 20 and >40 times the threshold current, respectively. The characteristic temperature is 63 K. It is inferred that the overall performance can be improved by minimizing the actual series resistance of 5.6 Ω. The regrown SI-InP:Fe is highly current blocking despite its adjacency to InP:Zn substrate

Keywords

III-V semiconductors; indium compounds; iron; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; sputter etching; vapour phase epitaxial growth; 20 C; 300 to 600 mA; 5 to 6 ohm; 63 K; InP:Zn substrate; InP:Zn-InP:Fe; RIE; characteristic temperature; hydride VPE; laser mesas; laser performance; power saturation currents; reactive ion etching; semiconductors; semiinsulating InP:Fe; series resistance; vertical mesas; Buffer layers; Laboratories; Laser modes; Optical device fabrication; Plasma applications; Plasma temperature; Power generation; Silicon; Thermal resistance; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147423

Filename

147423