• DocumentCode
    3552417
  • Title

    Measurement of conduction band discontinuity in pseudomorphic In xGa1-xAs/In0.52Al0.48As heterostructures

  • Author

    Huang, J.H. ; Lalevic, B. ; Chang, T.Y.

  • Author_Institution
    Dept. of Electr. Eng., Rutgers State Univ., Piscataway, NJ, USA
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    511
  • Lastpage
    514
  • Abstract
    The current-voltage-temperature (I-V-T) measurement technique is applied, in conjunction with capacitance-voltage (C-V) measurements, to n+ -InxGa1-xAs/In0.52Al0.48 As/n--In0.53 Ga0.47As semiconductor-insulator-semiconductor (SIS) capacitors. The compositional dependence of the conduction band discontinuity over the range of 0.43 ⩽x⩽0.64 was obtained
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junctions; semiconductor-insulator-semiconductor structures; CV measurements; InxGa1-xAs-In0.52Al0.48 As; compositional dependence; conduction band discontinuity; current-voltage-temperature measurement; semiconductors; Buffer layers; Capacitance-voltage characteristics; Capacitive sensors; Gallium arsenide; Heterojunctions; Indium phosphide; Ohmic contacts; Optical buffering; Semiconductor diodes; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147425
  • Filename
    147425
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552417