DocumentCode :
3552419
Title :
Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers
Author :
Sartorius, B. ; Brandstättner, M.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
fYear :
1991
fDate :
8-11 Apr 1991
Firstpage :
519
Lastpage :
522
Abstract :
The calibration and optimization of a two-wavelength transmission method for nondestructive thickness mapping of InGaAsP layers are described. In two-wavelength transmission, two beams are focused simultaneously to the same sample point: the absorption beam for which the substrate is transparent and only the layer under investigation is absorbing, and the reference beam that exhibits no absorption but nearly identical parasitic losses. The derivation of the absorption coefficient of the InGaAsP layers from measurements on layers with known thicknesses is discussed. The compensation of parasitic losses, optimized by using a reference wafer without an epitaxial layer during the balancing procedure, is also discussed
Keywords :
III-V semiconductors; calibration; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; thickness measurement; InGaAsP-InP; InP substrate; absolute thickness measurements; absorption beam; calibration; optimization; reference beam; semiconductors; thickness mapping; two-wavelength transmission; Absorption; Calibration; Epitaxial layers; Filters; Luminescence; Optoelectronic devices; Structural engineering; Substrates; Thickness measurement; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
Type :
conf
DOI :
10.1109/ICIPRM.1991.147427
Filename :
147427
Link To Document :
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