Nearly ideal Schottky contacts of n-InP

Author

Shi, Z.Q. ; Anderson, W.A.

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, Amherst, NY, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

535

Lastpage

538

Abstract

Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C ²-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states

Keywords

III-V semiconductors; Schottky effect; Schottky-barrier diodes; indium compounds; surface treatment; 100 to 300 K; C/V characteristics; I/V characteristics; InP; Schottky contacts; current transport mechanism; ideality factor; interface states; oxide-free surface; semiconductors; surface cleaning techniques; surface integrity; temperature range; thermionic emission transport; Capacitance-voltage characteristics; Electric variables; Etching; Indium phosphide; Metal-insulator structures; Protection; Schottky barriers; Schottky diodes; Surface cleaning; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147431

Filename

147431