• DocumentCode
    3552429
  • Title

    Silicon nitride deposited by direct photolysis of NH3 and SiH4 at 185 nm and its application to InP MISFETs

  • Author

    Proust, N. ; Petitjean, M. ; Perrin, J.

  • Author_Institution
    Thomson-CSF, Orsay, France
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    551
  • Lastpage
    554
  • Abstract
    The preparation of high quality silicon nitride films by direct photolysis of NH3-SiH4 at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250°C, a critical field of 4 MV/cm and a resistivity of 6×1015 Ω-cm are observed. For annealed samples. a density of states of 4×1011 cm-2 eV-1 is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N+ contact layer is described
  • Keywords
    III-V semiconductors; chemical analysis by nuclear reactions and scattering; chemical vapour deposition; indium compounds; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor devices; photolysis; semiconductor-insulator boundaries; silicon compounds; 1 MHz; 185 nm; 250 degC; 6×1015 ohmcm; InP substrates; InP-Si3N4; MIS diodes; NH3; NH3-SiH4; SiH4; Terman analysis; atomic composition; critical field; density of states; depletion mode MISFET; interface properties; nuclear analysis; photolysis; quasistatic C-V characteristics; quasistatic I-V characteristics; resistivity; Annealing; Atomic layer deposition; Atomic measurements; Conductivity; Diodes; Indium phosphide; Performance evaluation; Semiconductor films; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147436
  • Filename
    147436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552429