Title :
Silicon nitride deposited by direct photolysis of NH3 and SiH4 at 185 nm and its application to InP MISFETs
Author :
Proust, N. ; Petitjean, M. ; Perrin, J.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
The preparation of high quality silicon nitride films by direct photolysis of NH3-SiH4 at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250°C, a critical field of 4 MV/cm and a resistivity of 6×1015 Ω-cm are observed. For annealed samples. a density of states of 4×1011 cm-2 eV-1 is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N+ contact layer is described
Keywords :
III-V semiconductors; chemical analysis by nuclear reactions and scattering; chemical vapour deposition; indium compounds; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor devices; photolysis; semiconductor-insulator boundaries; silicon compounds; 1 MHz; 185 nm; 250 degC; 6×1015 ohmcm; InP substrates; InP-Si3N4; MIS diodes; NH3; NH3-SiH4; SiH4; Terman analysis; atomic composition; critical field; density of states; depletion mode MISFET; interface properties; nuclear analysis; photolysis; quasistatic C-V characteristics; quasistatic I-V characteristics; resistivity; Annealing; Atomic layer deposition; Atomic measurements; Conductivity; Diodes; Indium phosphide; Performance evaluation; Semiconductor films; Silicon; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147436
