Spectral photoluminescence and Raman investigations of surface treatments on InP

Author

Bollig, B. ; Iyer, R. ; Lile, D.L.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

555

Lastpage

558

Abstract

Results of photoluminescence (PL) and Raman spectroscopy measurements on the effects of different chemical and thermal treatments on the surface properties of InP are presented. From the Raman spectra, values of the surface potential and depletion width are calculated, which allow values of surface recombination velocity to be extracted from the PL data. The PL data provide unambiguous confirmation of the degradation of the unprotected InP surface at temperatures over 200°C

Keywords

III-V semiconductors; Raman spectra of inorganic solids; indium compounds; luminescence of inorganic solids; photoluminescence; surface potential; surface treatment; InP; Raman spectra; chemical treatment; depletion width; photoluminescence; surface degradation; surface potential; surface recombination velocity; surface treatments; thermal treatments; Degradation; Etching; III-V semiconductor materials; Indium phosphide; Optical materials; Photoluminescence; Radiative recombination; Raman scattering; Spectroscopy; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147437

Filename

147437