Title :
Silica layers formed on In0.53Ga0.47As by downstream PECVD
Author :
Montgomery, V. ; Kimpton, D.G. ; Swanson, J.G.
Author_Institution :
Dept. of Phys., Kingston Polytech., UK
Abstract :
In0.53Ga0.47As (IGA)-SiO2 interfaces are prepared by downstream plasma-enhanced chemical-vapor deposition (PECVD), which avoids exposing the semiconductor surface to the bombardment of the exciting plasma. The natural state of n- and p-type In0.53Ga0.47As in contact with SiO2 prepared by downstream PECVD is electron accumulation. In the case of n-type material, hole accumulation is achieved with negative insulator fields, but for p-MIS structures, Fermi level pinning occurs at 0.41 eV from the valence band edge. Hole accumulation could not be established. The quiescent electron accumulated state of the p-type surface causes surface leakage in junctions that are passivated with this material
Keywords :
III-V semiconductors; accumulation layers; gallium arsenide; indium compounds; interface electron states; metal-insulator-semiconductor structures; plasma CVD; semiconductor-insulator boundaries; silicon compounds; surface potential; Fermi level pinning; In0.53Ga0.47As; In0.53Ga0.47As-SiO2 interfaces; downstream PECVD; electron accumulation; hole accumulation; n-type material; negative insulator fields; p-MIS structures; p-type surface; plasma-enhanced chemical-vapor deposition; quiescent electron accumulated state; surface potential; Capacitance; Capacitance-voltage characteristics; Frequency; MOCVD; Molecular beam epitaxial growth; Ohmic contacts; Silicon compounds; Substrates; Temperature measurement; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147438
