Title :
Passivation of InP surfaces
Author :
Kulisch, W. ; Kiel, F. ; Bock, A. ; Frenck, H.J. ; Kassing, R.
Author_Institution :
Inst. of Tech. Phys., Kassel Univ., Germany
Abstract :
Results of a study of the suitability of various insulators in combination with various deposition techniques for the passivation of InP surfaces are presented. It is shown that among the techniques investigated, the best results were obtained with the remote plasma-enhanced chemical vapor deposition (PECVD) technique. The benefits of integral photoluminescence measurements for judging the influence of a variety of process steps during InP passivation on the semiconductor surface are discussed
Keywords :
III-V semiconductors; indium compounds; luminescence of inorganic solids; passivation; photoluminescence; plasma CVD; InP surface passivation; insulator deposition techniques; integral photoluminescence measurements; remote plasma-enhanced chemical vapor deposition; Cleaning; Heating; Indium phosphide; Inductors; Insulation; Passivation; Photoluminescence; Plasma applications; Plasma measurements; Plasma temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147441
