Title :
Horizontal integration fabrication of a GaAs-on-InP opto-electronic integrated circuit (OEIC) using seeded-mask technology: four channel variable bandwidth optical receiver
Author :
Sullivan, P. J Ó ; Allan, D.A. ; Herniman, J. ; Coyle, N. ; Young, R.
Author_Institution :
BT Labs., Ipswich, UK
Abstract :
The fabrication of a monolithic GaAs-on-InP, four channel, variable-bandwidth photoreceiver using seeded mask technology is discussed. The method, which is compatible with atmospheric metalorganic vapor-phase epitaxy (MOVPE) growth, may be applied to lattice matched electronics for other optical components. High-frequency data from fully functional OEICs are reported
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; receivers; semiconductor growth; vapour phase epitaxial growth; GaAs-InP; MOVPE; OEICs; atmospheric metalorganic vapor-phase epitaxy; four channel variable bandwidth optical receiver; horizontal integration technology; seeded-mask technology; variable-bandwidth photoreceiver; Circuits; Dielectric materials; Ear; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Optoelectronic devices; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147442
