Significant improvement of electroabsorption saturation intensity by use of AlGaInAs as barriers for GaInAs multiple quantum wells

Author

Chang, T.Y. ; Sauer, N.J. ; Wood, T.H. ; Pastalan, J.Z. ; Burrus, C.A. ; Johnson, B.C.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

588

Lastpage

591

Abstract

It is shown that quaternary AlGaInAs is an excellent barrier material for long wavelength modulators using GaInAs quantum wells. Quaternary AlGaInAs has a lower trap density than ternary AlInAs. A low valence-band discontinuity results in saturation intensities at least a factor of 30 higher than those obtained with InP barriers. Decreasing the barrier thickness increases saturation intensities by an additional factor of five

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; GaInAs-AlGaInAs; barrier material; electroabsorption saturation intensity; long wavelength modulators; multiple quantum wells; saturation intensities; trap density; valence-band discontinuity; Indium phosphide; Molecular beam epitaxial growth; Optical bistability; Optical devices; Optical materials; Optical modulation; Optical saturation; Photonic band gap; Quantum well devices; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147445

Filename

147445