Advanced growth/processing for quantum transistors

Author

Furuya, Kazuhito ; Miyamoto, Yasuyuki

Author_Institution

Dept. of Electr. & Electron, Eng., Tokyo Inst. of Technol., Japan

fYear

1991

fDate

8-11 Apr 1991

Firstpage

596

Lastpage

601

Abstract

The control of electron transport by using the coherent interaction between the electron and artificially formed potential structure is discussed. The principle of the electron wave diffraction transistor is explained. Fabrication of GaInAs/InP nanometer grating for coherent electron devices is described. Extending the concept of the coherent interaction between the electron and the potential structure, the use of the coherent interaction between the electron and impurity ions placed in the semiconductor crystal according to a design is proposed

Keywords

III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; quantum interference devices; semiconductor growth; vapour phase epitaxial growth; GaInAs-InP nanometer grating; OMVPE; artificially formed potential structure; coherent electron devices; electron beam lithography; electron transport control; electron wave diffraction transistor; etching; impurity ions; quantum transistors; Chemicals; Diffraction gratings; Electron emission; Fabrication; Indium phosphide; Lithography; Nanoscale devices; Resists; Transistors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147447

Filename

147447