Title :
Thermal stability of MBE-grown Si-doped InGaAs/InAlAs heterostructures
Author :
Tischler, M.A. ; Parker, B.D. ; DeGelormo, J. ; Jackson, T.N. ; Cardone, F. ; Goorsky, M.S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The effects of uncapped rapid thermal annealing in an AsH3 ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG) structures are discussed. It is shown that the rapid thermal annealing results in the formation of a parasitic charge near the back of the InGaAs channel. The annealing does not result in large changes in the heterostructure or the intentional dopant position
Keywords :
Hall effect; III-V semiconductors; X-ray diffraction examination of materials; aluminium compounds; carrier density; carrier mobility; electron gas; gallium arsenide; incoherent light annealing; indium compounds; semiconductor epitaxial layers; semiconductor junctions; 2DEG structures; AsH3 ambient; Hall effect; InGaAs-InAlAs:Si heterostructures; InP substrates; MBE growth; X-ray diffraction; carrier mobility; dopant position; parasitic charge; sheet density; thermal stability; two dimensional electron gas; uncapped rapid thermal annealing; Circuits; Implants; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Rapid thermal annealing; Substrates; Thermal stability;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147448
