RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells-the influence of InGaAs cap layers

Author

Oshinowo, J. ; Forchel, A. ; Grützmacher, D. ; Stollenwerk, M.

Author_Institution

Tech. Phys., Wurzburg Univ., Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

606

Lastpage

609

Abstract

A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600°C and 950°C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined

Keywords

III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor quantum wells; 600 to 950 degC; III-V semiconductors; InGaAs-InP quantum wells; activation energies; cap layers; interdiffusion; luminescence energy shifts; photoluminescence spectroscopy; rapid thermal annealing; temperature dependence; thermal stability; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Quantum well lasers; Rapid thermal annealing; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147449

Filename

147449