• DocumentCode
    3552469
  • Title

    Ohmic contacts for GaAs devices

  • Author

    Cox, Ronaid H. ; Strack, Hans A. ; Cox, R.H. ; Strack, H.A.

  • Author_Institution
    Texas Instruments Inc., Dallas, Texas
  • Volume
    12
  • fYear
    1966
  • fDate
    1966
  • Firstpage
    36
  • Lastpage
    36
  • Abstract
    Ohmic contacts were developed for GaAs devices, such as transistors and Gunn oscillators. Contacts had to meet the following requirements: 1) they must be ohmic to both low and high resistivity n-and p-type GaAs, 2) they must contact both
  • Keywords
    Conductivity; Diodes; Fabrication; Gallium arsenide; Gunn devices; Impurities; Ohmic contacts; Oscillators; Seals; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1966 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1966.187659
  • Filename
    1474498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552469