Self-aligned gate recess technology for the fabrication of InAlAs/InGaAs HEMT structures, using InAlAs as an etch-stop layer

Author

Lauterbach, Ch ; Albrecht, H. ; Beschorner, M. ; Gessner, R. ; Schier, M.

Author_Institution

Siemens Res. Lab., Munich, Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

610

Lastpage

613

Abstract

A self-aligned gate recess technology for the fabrication of InAlAs/InGaAs HEMTs is discussed. The applied reactive ion etching (RIE) process has a selectivity for InGaAs over InAlAs of 6:1, allowing a thin InAlAs Schottky barrier layer. The self-aligned Ti/Au metallization is suitable for the reproducible fabrication of gate lengths down to 0.3 μm, starting with a 1 μm recess. Realized gate leakage currents of 100 nA at a reverse bias of 5 V show that no degradation of the Schottky barrier occurs due to the process technology. With first HEMTs a transconductance of 400 mS/mm and a cutoff frequency of 22 GHz have been achieved

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; metallisation; semiconductor technology; solid-state microwave devices; sputter etching; 100 nA; 22 GHz; HEMT structures; III-V semiconductor; InAlAs etch stop layer; InAlAs-InGaAs structures; Schottky barrier layer; Ti-Au metallisation; applied reactive ion etching; cutoff frequency; fabrication; gate leakage currents; self-aligned gate recess technology; transconductance; Etching; Fabrication; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Leakage current; MODFETs; Metallization; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147450

Filename

147450