Title :
Rapid thermal low pressure (metallorganic) chemical vapor deposition of thin films onto InP
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
The application of the rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD) technique to the deposition of non-semiconductor thin-layer materials necessary for producing metal contacts to InP-based microelectronic devices is discussed. Both dielectric (SiO2) and semimetal (TiNx) films were deposited. The two processes were realized in low pressures (5-30 torr), relatively low temperatures (350-550°C), and short durations (1-200 s), exhibiting rapid growth kinetics and uniform deposited film morphology. The influence of the process parameters on the two film properties is described, and optimum deposition conditions are identified. Contacts that were prepared by RT-LPMOCVD of the TiNx onto p-InGaAs layer using etched patterns in RT-LPCVD-SiO2 layer are characterized as ohmic contacts
Keywords :
III-V semiconductors; Schottky effect; chemical vapour deposition; indium compounds; insulating thin films; metallisation; ohmic contacts; silicon compounds; titanium compounds; 1 to 200 s; 350 to 550 C; 5 to 30 torr; III-V semiconductor; InP substrate; Schottky barrier height; SiO2-InP; TiNx-InGaAs; TiNx-InP; dielectric SiO2 films; etched patterns; insulating films; metal contacts; ohmic contacts; optimum deposition conditions; process parameters; rapid growth kinetics; rapid thermal low pressure metalorganic chemical vapor deposition; semimetal TiNx films; semimetal films; thin-layer materials; uniform deposited film morphology; Chemical vapor deposition; Dielectric materials; Etching; Inorganic materials; Kinetic theory; Microelectronics; Morphology; Rapid thermal processing; Temperature; Tin;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147451
